Defect characteristics by boron cluster ion implantation-Reference-Cited by-同舟云学术

Defect characteristics by boron cluster ion implantation

Published:2003-05 Issue: Volume:206 Page:855-860
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Aoki Takaaki,Matsuo Jiro,Takaoka Gikan,Toyoda Noriaki,Yamada Isao

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

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3. T. Aoki, J. Matsuo, Z. Insepov, I. Yamada, 1998 International Conference on Ion Implantation Technology Proceedings, Vol. 1254, 1999, p. 1254

4. Implantation and transient B diffusion in Si: The source of the interstitials

5. Using doping superlattices to study transient‐enhanced diffusion of boron in regrown silicon

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