Rutherford backscattering analysis of damage in ion implanted

Author:

Wendler E.,Gaiduk P.I.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Energy-Dependent RBS Channelling Analysis of Epitaxial ZnO Layers Grown on ZnO by RF-Magnetron Sputtering;Crystals;2019-06-04

2. Monte Carlo simulations of channeling spectra recorded for samples containing complex defects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02

3. MD simulation of ion implantation damage in AlGaAs: III. Defect accumulation and amorphization;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-01

4. MD simulation of ion implantation damage in AlGaAs: II. Generation of point defects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-01

5. MD simulation of ion implantation damage in AlGaAs: I. Displacement energies;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-11

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