Author:
Horn K.M.,Dodd P.E.,Breese M.B.H.,Doyle B.L.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. TCAD modeling of ion beam induced charge collection in silicon Schottky barrier devices;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-09
2. Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-09
3. Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics;IEEE Transactions on Nuclear Science;1998-12
4. The influence of ion induced damage on lateral charge collection and IBIC image contrast;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-03