Theoretical studies of optoelectronic and mechanical properties of GaPxSb1−x alloys under the effect of temperature
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference56 articles.
1. Growth of AlPSb and GaPSb on InP by gas-source molecular beam epitaxy
2. High-pressure band parameters for GaAs: first principles calculations
3. Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures
4. Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors
5. Effects of compositional disorder upon electronic and lattice properties of GaxIn1−xAs
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1. Effect of micro-viscosity on the rotational diffusion: pulsed laser-based time-resolved single-molecule study;Optical and Quantum Electronics;2023-12-14
2. Mechanical, optical, and lattice vibrational properties of gallium antimonide (GaSb) semiconductor under the influence of temperature;Physica Scripta;2023-04-04
3. Behavior of lattice dynamics, electronic, optical, and mechanical properties of pentanary GaxIn1-xPySbzAs1-y-z alloy lattice matched to GaSb substrate under temperature;Journal of Physics and Chemistry of Solids;2023-04
4. Investigation of thermal dependence of phonon frequencies, sound velocity, mechanical and optical characteristics of the β-GaN semiconductor compound;Pramana;2023-03-28
5. Insight into pressure effect on optoelectronic, mechanical, and lattice vibrational properties of nanostructured GaxIn1 − xPySbzAs1 − y − z for the solar cells system;Scientific Reports;2023-03-08
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