Properties of nitrogen-doped indium oxide films prepared using chemical vapor deposition technique for photoelectrochemical application
Author:
Funder
Universiti Sains Malaysia
Kementerian Pengajian Tinggi Malaysia
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference44 articles.
1. Phase stability, electronic structure, and optical properties of indium oxide polytypes;Karazhanov;Phys. Rev. B Condens. Matter,2007
2. A generic approach for controlled synthesis of In2O3 nanostructures for gas sensing applications;Qurashi;J. Alloys Compd.,2009
3. In2O3 nanowires as chemical sensors;Li;Appl. Phys. Lett.,2003
4. Electron transport study of indium oxide as photoanode in DSSCs: a review;Mahalingam;Renew. Sustain. Energy Rev.,2016
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A comparative study of TiO2 nanostructures prepared by one-step and two-step hydrothermal method: Physical and photoelectrochemical properties;Physica B: Condensed Matter;2024-07
2. Photoelectrochemical properties of anatase TiO2 nanostructures prepared by hydrothermal method: Effect of illumination and external bias on charge transport;Ceramics International;2024-06
3. Binary and ternary metal oxide semiconductor thin films for effective gas sensing applications: A comprehensive review and future prospects;Progress in Materials Science;2024-04
4. Thermoluminescence study of indium doped phosphate glass;Radiation Physics and Chemistry;2024-04
5. Study of spin-coated undoped, Sn3+ doped and Sn3+/Zn2+-codoped In2O3 films and their photocatalytic activity performance;Journal of Materials Science: Materials in Electronics;2023-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3