Effect of x-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS gates
Author:
Affiliation:
1. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China
2. China Electronics Technology Group Corporation No. 58 Research Institute, Wuxi 204035, China
Funder
National Key R&D Program of China
Publisher
AIP Publishing
Subject
Automotive Engineering
Link
https://aip.scitation.org/doi/pdf/10.1016/j.npe.2020.11.001
Reference18 articles.
1. GaN-on-Si Power Technology: Devices and Applications
2. Solar Flares: High-Energy Radiation and Particles
3. 60Co gamma radiation effects on DC, RF, and pulsed I–V characteristics of AlGaN/GaN HEMTs
4. On the interface states and series resistance profiles of (Ni/Au)–Al0.22Ga0.78N/AlN/GaN heterostructures before and after 60Co (γ-ray) irradiation
5. The Effects of Temperature and Electron Radiation on the Electrical Properties of AlGaN/GaN HFETs
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4. Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer;IEEE Journal of the Electron Devices Society;2022
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