Ga-vacancy induced room temperature ferromagnetism observed in N-irradiated GaN films-Reference-Cited by-同舟云学术

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Ga-vacancy induced room temperature ferromagnetism observed in N-irradiated GaN films

Published:2014-11 Issue: Volume:616-617 Page:161-164
ISSN:0009-2614
Container-title:Chemical Physics Letters
language:en
Short-container-title:Chemical Physics Letters

Author:

Xu Juping,Li Qiang,Zhang Wenshuai,Liu Jiandang,Du Huaijiang,Ye Bangjiao

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference33 articles.

1. Ferromagnetism in transition-metal-dopedTiO2thin films

2. Search for ferromagnetism in transition-metal-doped piezoelectric ZnO

3. Effects of high-dose Mn implantation into ZnO grown on sapphire

4. Intrinsic Ferromagnetism in Insulating Cobalt Doped AnataseTiO2

5. ferromagnetism

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1. Role of position specific Ga and N vacancy related defects by ion irradiation in tailoring the ferromagnetic properties of thin GaN films: An experimental and first principle-based study;Solid State Communications;2023-10

2. Unveiling ferromagnetism and antiferromagnetism in two dimensions at room temperature;Journal of Physics D: Applied Physics;2022-04-14

3. Tuning of ferromagnetic behavior of GaN films by N ion implantation: An experimental and first principle-based study;Journal of Magnetism and Magnetic Materials;2021-04

4. Defect mediated modification of structural, optical and magnetic properties of Xe3+ ions irradiated GaN/sapphire films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-03

5. Room-temperature ferromagnetism in C +-implanted AlN films;Applied Physics Letters;2019-12-23

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