Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer-Reference-Cited by-同舟云学术

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Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer

Published:2015-09 Issue: Volume:85 Page:59-66
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Sun Pai,Bao Xianglong,Liu Songqing,Ye Chunya,Yuan Zhaorong,Wu Yukun,Li Shuping,Kang Junyong

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference26 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides;Khan;Nat. Photon.,2008

2. Deep-ultraviolet AlGaN light-emitting diodes with variable quantum well and barrier widths;Kim;Phys. Status Solid (a),2014

3. Full-color fluorescent display devices using a near-UV light-emitting diode;Sato;Jpn. J. Appl. Phys.,1996

4. Properties of full-color fluorescent display devices excited by a UV light-emitting diode;Sato;Jpn. J. Appl. Phys.,1998

5. Advantages of AlGaN-based 310-nm UV light-emitting diodes with Al content graded AlGaN electron blocking layers;Li;Photon. J. IEEE,2013

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