Chemical doping of transition metal dichalcogenides (TMDCs) based field effect transistors: A review-Reference-Cited by-同舟云学术

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Chemical doping of transition metal dichalcogenides (TMDCs) based field effect transistors: A review

Published:2020-01 Issue: Volume:137 Page:106350
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Iqbal M.W.,Elahi E.,Amin Aliya,Hussain G.,Aftab Sikandar

Funder

Higher Education Commission

National Research Program for Universities

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference117 articles.

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2. Graphene: status and prospects;Geim;Science,2009

3. Integrated circuits based on bilayer MoS2 transistors;Wang;Nano Lett.,2012

4. Graphene spin valve: an angle sensor;Iqbal;J. Magn. Magn. Mater.,2017

5. Graphene-based counter electrode for dye-sensitized solar cells;Zhang;Carbon,2011

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4. Physical Strategies for Geometric Control of Transition Metal Dichalcogenide Atomic Layers by Chemical Vapor Deposition;Advanced Physics Research;2024-07-15

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