Effects of annealing temperature on the electrical characteristics of Li–N co-doped polycrystalline ZnO thin film transistors-Reference-Cited by-同舟云学术

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Effects of annealing temperature on the electrical characteristics of Li–N co-doped polycrystalline ZnO thin film transistors

Published:2017-09 Issue: Volume:109 Page:279-285
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Tian Longjie,Zhou Dongzhan,Ma Yaobin,Zhang Xiqing,Wang Yongsheng

Funder

National Natural Science Foundation of China

State Key Laboratory on Integrated Optoelectronics

Central Universities

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference34 articles.

1. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

2. High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics

3. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

4. Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

5. Growth of IZO/IGZO dual-active-layer for low-voltage-drive and high-mobility thin film transistors based on an ALD grown Al2O3 gate insulator

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1. The influence of low indium composition ratio on sol–gel solution-deposited amorphous zinc oxide thin film transistors;Journal of Materials Science: Materials in Electronics;2020-06-09

2. Morphology, electrical and optical properties of magnetron sputtered porous ZnO thin films on Si(100) and Si(111) substrates;Ceramics International;2020-04

3. Fabrication of preferential orientation ZnO thin films with exposed holes by high temperature annealing low-temperature-grown ZnO thin films on different substrates;Superlattices and Microstructures;2019-12

4. Co-doping: an effective strategy for achieving stable p-type ZnO thin films;Nano Energy;2018-10

5. Room-temperature fabrication of bilayer InZnO:Li/MgZnO:Li thin film transistors using radio frequency magnetron sputtering;Journal of Physics D: Applied Physics;2018-06-04

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