The influence of well thickness on the photoluminescence properties of blue-violet light emitting InGaN/GaN multiple quantum wells-Reference-Cited by-同舟云学术

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The influence of well thickness on the photoluminescence properties of blue-violet light emitting InGaN/GaN multiple quantum wells

Published:2018-01 Issue: Volume:113 Page:534-540
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Huang Jialin,Liu Wei,Yi Linkai,Zhou Mei,Zhao Degang,Jiang Desheng

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. Group III-nitride lasers: a materials perspective;Hardy;Mater. Today,2011

2. GaN-based green laser diodes;Jiang;J. Semicond.,2016

3. GaN-on-Si blue/white LEDs: epitaxy, chip, and package;Sun;J. Semicond.,2016

4. GaN grown on nano-patterned sapphire substrates;Kong;J. Semicond.,2015

5. Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes;Zhao;J. Semicond.,2017

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monolithic integration of deep ultraviolet and visible light-emitting diodes for radiative sterilization application;Applied Physics Letters;2024-03-11

2. Degradation of InGaN/GaN Quantum Well UV LEDs Caused by Short-Term Exposure to Current;Technical Physics;2023-11

3. Optical Properties of InGaN/GaN QW with the Same Well-Plus-Barrier Thickness;Crystals;2022-01-15

4. Study of characteristics of LEDs based on InGaN/GaN quantum wells under short electric impacts accompanied by joule heating;Journal of Physics: Conference Series;2021-11-01

5. Effects of photogenerated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells;Materials Research Express;2019-04-24

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