First-principles electronic structure study of InxGa1−xAs nanotubes and InAs/GaAs nanotube superlattices-Reference-Cited by-同舟云学术

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First-principles electronic structure study of InxGa1−xAs nanotubes and InAs/GaAs nanotube superlattices

Published:2013-08 Issue: Volume:60 Page:29-39
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Sun Wei-Feng,Wang Xuan,Sun Zhi,Lei Qing-Quan

Funder

National Basic Research Program of China

State Key Laboratory Breeding Base of Dielectrics Engineering of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference31 articles.

1. Energy-band gap of monolayer superlattices calculated by a modified tight-binding method with electronegativity

2. Design for new structure InAs/InxGa1−xSb superlattice two-color—short and long wavelength infrared photodetector

3. Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

4. A review of nanowire growth promoted by alloys and non-alloying elements with emphasis on Au-assisted III–V nanowires

5. Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays

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1. Reduction of variability for the assessment of side effects of toxicants on honeybees and understanding drivers for colony development;PLOS ONE;2020-02-14

2. Electronic and Structural Properties of Semiconductor GaAs Nanotubes;Journal of Electronic Materials;2018-09-21

3. Stability of rolled-up GaAs nanotubes;Journal of Molecular Modeling;2017-06-16

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