Hot electron assisted vertical leakage/breakdown in AlGaN/GaN heterostructures on Si substrates-Reference-Cited by-同舟云学术

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Hot electron assisted vertical leakage/breakdown in AlGaN/GaN heterostructures on Si substrates

Published:2017-07 Issue: Volume:107 Page:240-245
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Hu Anqi,Yang Xuelin,Cheng Jianpeng,Guo Lei,Zhang Jie,Feng Yuxia,Ji Panfeng,Tang Ning,Ge Weikun,Wang Xinqiang,Shen Bo

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

National High-Tech Research and Development Program of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors

2. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

3. Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD

4. Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Channel Hot-Electron’s Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2021-10

2. Role of electron injection on vertical leakage in GaN-on-Si epitaxial layers;Superlattices and Microstructures;2019-04

3. Impact of volatile organic compound exposure on electrical breakdown in GaN dual channel microcantilevers;Applied Physics Letters;2019-03-18

4. Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model;IEEE Transactions on Electron Devices;2019-01

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