Improved Metal Oxide Semiconductor Field Effect Transistor models with wide temperature range including cryogenic temperature

Author:

Liu Siyang,Li Xiujun,Liu Chao,Sun Weifeng

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. K. Rajashekara, B. Akin, A review of cryogenic power electronics status and applications, in: IEEE International Electric Machines & Drives Conference, Chicago, IL, July, 2013, 899 – 904.

2. High-gain cryogenic amplifer assembly employing a commercial CMOS operational amplifer;Proctor;Rev. Sci. Instrum.,2015

3. Martin P, Guellec F, MOSFET modeling for simulation, design and optimization of infrared CMOS image sensors working at cryogenic temperature, 2011 Proceedings of 18th International Conference-mixed Design of Integrated Circuits and Systems, Gliwice, Poland, June, 2011, 103–106.

4. 320× 256 readout integrated circuit for infrared focal plane arrays with low-temperature MOSFET model;Sun;IETE J. Res.,2011

5. A low power cryogenic CMOS ROIC design for 512×512 IRFPA;Zhao;J. Circuit Syst. Comput.,2013

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