Progress in nitride semiconductors from GaN to InN—MOVPE growth and characteristics
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference40 articles.
1. Proc. 16th Intern. Symp. on GaAs and Related Compounds;Matsuoka,1990
2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
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4. Wide-gap semiconductor InGaN and InGaAln grown by MOVPE
5. Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy
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