Short channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions-Reference-Cited by-同舟云学术

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Short channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions

Published:2016-12 Issue: Volume:100 Page:857-866
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Chien Nguyen Dang,Shih Chun-Hsing

Funder

Vietnam National Foundation for Science and Technology Development

University of Dalat

Ministry of Science and Technology

National Center for High-Performance Computing of Taiwan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference34 articles.

1. Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec;Choi;IEEE Electron Device Lett.,2007

2. Design guidelines to achieve minimum energy operation for ultra low voltage tunneling FET logic circuits;Fuketa;Jpn. J. Appl. Phys.,2015

3. Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped NiSi2 tunnel junctions;Knoll;Solid State Electron,2013

4. Si tunnel transistors with a novel silicided source and 46mV/dec swing;Jeon,2010

5. Dual-metal-gate InAs tunnel FET with enhanced turn-on steepness and high ON-current;Beneventi;IEEE Trans. Electron Devices,2014

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance;Micromachines;2023-03-31

2. An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar, Off and ON states;J NANOANALYSIS;2021

3. Influence of hetero-gate dielectrics on short-channel effects in scaled tunnel field-effect transistors;Current Applied Physics;2020-12

4. Influence of Fringing-Field on DC/AC Characteristics of Si₁₋ₓGeₓ Based Multi-Channel Tunnel FETs;IEEE Access;2020

5. Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios;Applied Physics A;2020-01

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