The localized effect of the Bi level on the valence band in the dilute bismuth GaBixAs1-x alloy-Reference-Cited by-同舟云学术

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The localized effect of the Bi level on the valence band in the dilute bismuth GaBixAs1-x alloy

Published:2018-05 Issue: Volume:117 Page:515-519
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Zhao Chuan-Zhen,Zhu Min-Min,Wang Jun,Wang Sha-Sha,Lu Ke-Qing

Funder

National Nature Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Bi isoelectronic impurities in GaAs

2. Composition dependence of photoluminescence of GaAs1−xBix alloys

3. Similar and dissimilar aspects ofIII−Vsemiconductors containingBiversusN

4. Molecular beam epitaxy growth of GaAs1−xBix

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The properties of the valence band maximum in the as-rich InBixAs1-x alloy;Solid State Communications;2023-09

2. Structural, Electronic and Optical Properties of the Ordered InP1 – xBix: An Ab-Initio Study;Russian Journal of Physical Chemistry B;2023-08

3. Thermal processes contributions to the temperature dependence of the energy gap in dilute bismuth III-V alloys;Solid State Communications;2022-02

4. The bandgap energy of the dilute bismuth GaBi x Sb1−x alloy depending on temperature;Materials Science-Poland;2021-09-01

5. Band gap energy of GaBixAs1-x in the As-rich range calculated by the first-principle calculation and the modified BAC model;Applied Physics A;2021-07-19

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