Influence of the vacancy-defect and transition-metal doping in arsenene: A first-principles study-Reference-Cited by-同舟云学术

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Influence of the vacancy-defect and transition-metal doping in arsenene: A first-principles study

Published:2019-08 Issue: Volume:132 Page:106163
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Liu Yaxin,Zhou Qingxiao,Ju Weiwei,Li Jiahui,Liu Yanling

Funder

Student Research Training Program of School of Physics and Engineering

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference53 articles.

1. Honeycomb carbon: a review of graphene;Allen;Chem. Rev.,2010

2. Silicene: a review of recent experimental and theoretical investigations;Houssa;J. Phys. Condens. Matter,2015

3. Quantum spin Hall effect in silicene and two-dimensional germanium;Liu;Phys. Rev. Lett.,2011

4. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides;Wang;Nat. Nanotechnol.,2012

5. Phosphorene: an unexplored 2d semiconductor with a high hole mobility;Liu;ACS Nano,2014

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4. First-principles calculations to investigate the effect of X (X=B, Al, Ga) atomic substitution concentration on the electronic structure and optical properties of arsenene;Modern Physics Letters B;2023-11-16

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