Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 ≤ x ≤ 0.104)-Reference-Cited by-同舟云学术

Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 ≤ x ≤ 0.104)

Published:2018-01 Issue: Volume:113 Page:720-725
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Liang Feng,Yang Jing^ORCID,Zhao Degang,Jiang Desheng,Liu Zongshun,Zhu Jianjun,Chen Ping^ORCID,Liu Wei,Liu Shuangtao,Xing Yao,Zhang Liqun,Wang Wenjie,Li Mo,Zhang Yuantao,Du Guotong

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference23 articles.

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3. Comprehensive and fully self-consistent modeling of modern semiconductor lasers;Nakwaski;J. Semicond.,2016

4. GaInN laser diodes from 440 to 530nm: a performance study on single-mode and multi-mode R&D designs;Strauss;SPIE,2017

5. Gallium indium nitride-based green lasers;Sizov;J. Light. Technol.,2012

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1. Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells;Crystals;2022-06-14

2. GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature;Journal of Semiconductors;2021-11-01

3. Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 h;Journal of Semiconductors;2019-02