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Analytical model of LDMOS with a single step buried oxide layer

  • Published:2016-09 Issue: Volume:97 Page:358-370
  • ISSN:0749-6036
  • Container-title:Superlattices and Microstructures
  • language:en
  • Short-container-title:Superlattices and Microstructures

Author:

Yuan SongORCID,Duan Baoxing,Cao Zhen,Guo Haijun,Yang Yintang

Funder

National Key Basic Research Program of China

State Key Program of National Natural Science of China

Science and Technology Innovation Project of Shaanxi Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. A novel high-breakdown-voltage SOI MESFET by modified charge distribution;Aminbeidokhti;IEEE Trans. Electron Device,2012

2. A trench isolated thick SOI process as platform for various electrical and optical integrated devices;Lerner,2013

3. Device design of partial-SOI SJ-LDMOS with n type charge islands;Tang,2013

4. Radiation effects in advanced SOI devices: new insights into total ionizing dose and single-event effects;Gaillardin,2013

5. New concept for improving characteristics of high-voltage power devices by buried layers modulation effect;Duan,2006

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Raised breakdown voltage in a high‐voltage recessed LDD‐SOI by submerged SI3N4;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-07-08

2. Analytical breakdown voltage model for a partial SOI-LDMOS transistor with a buried oxide step structure;Journal of Computational Electronics;2021-09-01

3. Unified Analytical Model for SOI LDMOS With Electric Field Modulation;IEEE Journal of the Electron Devices Society;2020

4. Analytical model of buried air partial SOI LDMOS;Superlattices and Microstructures;2019-08

5. A SiC LDMOS with electric field modulation by a step compound drift region;Superlattices and Microstructures;2018-07
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