A novel Tunneling Graphene Nano Ribbon Field Effect Transistor with dual material gate: Numerical studies-Reference-Cited by-同舟云学术

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A novel Tunneling Graphene Nano Ribbon Field Effect Transistor with dual material gate: Numerical studies

Published:2016-09 Issue: Volume:97 Page:277-286
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Ghoreishi Seyed Saleh,Saghafi Kamyar,Yousefi Reza,Moravvej-farshi Mohammad Kazem

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference38 articles.

1. Electronic states of graphene nanoribbons and analytical solutions;Wakabayashi;Sci. Technol. Adv. Mater,2010

2. Energy band-gap engineering of graphene nanoribbons;Han;Phys. Rev. Lett.,2007

3. Graphene nanoribbon electronics;Chen;Phys. E Amst.,2007

4. The rise of graphene;Geim;Nat. Mater,2007

5. Electric field effect in atomically thin carbon films;Novoselov;Science,2004

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