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4H-SiC trench IGBT with lower on-state voltage drop

  • Published:2017-03 Issue: Volume:103 Page:56-63
  • ISSN:0749-6036
  • Container-title:Superlattices and Microstructures
  • language:en
  • Short-container-title:Superlattices and Microstructures

Author:

Liu Yan-juan,Wang Ying,Yu Cheng-hao,Fei-Cao

Funder

Excellent Youth Foundation of Heilongjiang Province of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference26 articles.

1. Silicon Carbide Power Device;Baliga,2005

2. SiC power devices for smart grid systems;Palmour,2010

3. SiC power devices – present status, applications and future perspective;Östling,2011

4. A planar gate high-conductivity IGBT (HiGT) with hole barrier layer;Mori;IEEE Trans. Electron Device,2007

5. Design, simulation, and characterization of high-voltage SiC p-IGBT;Sui,2007

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Brittle-ductile transition mechanism during grinding 4H-SiC wafer considering laminated structure;International Journal of Mechanical Sciences;2024-12

2. Study on stress in trench structures during silicon IGBTs process-oxidation;Japanese Journal of Applied Physics;2024-02-14

3. Low On-State Voltage and EMI Noise 4H-SiC IGBT With Self-Biased Split-Gate pMOS;IEEE Transactions on Electron Devices;2023-02

4. On-State Voltage Drop Analytical Model for 4H-SiC Trench IGBTs;Crystals;2022-04-22

5. Influence of N-drift Layer Parameters on Static and Dynamic Performances of Ultra-high Voltage SiC IGBT;2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia);2020-11-29
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