Author:
Das Rinku Rani,Maity Santanu,Muchahary Deboraj,Bhunia Chandan Tilak
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. FinFET—a self-aligned double-gate MOSFET scalable to 20 nm;Hisamoto;IEEE Trans. Electron Devices,2000
2. Scaling of SOI FinFETs down to Fin width of 4nm for the 10nm technology node;Chang;VLSI Symp. Tech. Dig.,2011
3. Comprehensive analysis of variability sources of FinFET characteristics;Matsukawa;VLSI Symp. Tech. Dig.,2009
4. Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession;Chiarella;Solid State Electron.,2010
5. Multiple-gate SOI MOSFETs;Colinge;Solid-State Electron.,2004
Cited by
20 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献