Blue cathodoluminescence from thulium implanted AlxGa1−xN and InxAl1−xN

Author:

Roqan I.S.,Lorenz K.,O’Donnell K.P.,Trager-Cowan C.,Martin R.W. ,Watson I.M.,Alves E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. Blue emission from Tm-doped GaN electroluminescent devices

2. I.S. Roqan, C. Trager-Cowan, B. Hourahine, K. Lorenz, E. Nogales, K.P. O’Donnell, R.W. Martin, E. Alves, S. Ruffenach, O. Briot, Mater. Res. Soc. Symp. Proc. Series 0892 (2005) FF23-13. (Symposium on GaN, AlN, InN and related materials, held at the 2005 MRS Fall meeting)

3. Spectra and energy levels ofTm3+(4f12)in AlN

4. Enhanced blue emission from Tm-doped AlxGa1−xN electroluminescent thin films

5. Photoluminescence properties of in situ Tm-doped AlxGa1−xN

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