EBIC/PL investigations of dislocation network produced by silicon wafer direct bonding-Reference-Cited by-同舟云学术

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EBIC/PL investigations of dislocation network produced by silicon wafer direct bonding

Published:2009-04 Issue:4-5 Volume:45 Page:314-320
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Jia G.,Seifert W.,Mchedlidze T.,Arguirov T.,Kittler M.,Wilhelm T.,Reiche M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Dislocations as electrically active centres in semiconductors half a century from the discovery

2. Semiconductor wafer bonding

3. Properties of dislocation networks formed by Si wafer direct bonding

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1. Effects of a linear arrangement of embedded Ge nanocrystals on an electron beam induced current;Micro and Nanostructures;2022-06

2. Simulated Contrast of Two Dislocations;Semiconductors;2019-04

3. An insight into dislocation density reduction in multicrystalline silicon;Solar Energy Materials and Solar Cells;2016-10

4. Electrical characterization of silicon wafer bonding interfaces by means of voltage dependent light beam and electron beam induced current and capacitance of Schottky diodes;physica status solidi (c);2011-02-24

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