Author:
Chander Subhash,Gupta Samuder,Ajay ,Gupta Mridula
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference29 articles.
1. Design of GaN/AlGaN HEMT class-e power amplifier considering trapping and thermal effects;Syed Islam;IEEE proc,2002
2. High-field effects in silicon nitride passivated GaN MODFETs;Sahoo;IEEE Trans. Electron. Dev.,2003
3. Unintentionally doped n -type Al0.67Ga0.33N epilayers;Nakarmi;Appl. Phys. Lett.,2005
4. Identification of GaN buffer traps in microwave power AlGaN/GaN HEMTs through low frequency S-parameters measurements and TCAD based physical device simulations;Subramani;IEEE Trans. Electron. Dev.,2017
5. Polarization effects, surface states, and the source of electrons in AlGaNÕGaNheterostructure field effect transistors;Ibbetson;Appl. Phys. Lett.,2000
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