Theoretical logic performance estimation of Silicon, Germanium and SiGe nanowire Fin-Field Effect Transistor-Reference-Cited by-同舟云学术

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Theoretical logic performance estimation of Silicon, Germanium and SiGe nanowire Fin-Field Effect Transistor

Published:2018-08 Issue: Volume:120 Page:578-587
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Mobarakeh Mojtaba Saeidi,Omrani Somayeh,Vali Mehran,Bayani Amirhossein,Omrani Narges

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference38 articles.

1. 20–80nm Channel length InGaAs gate-all-around nanowire MOSFETs with EOT= 1.2 nm and lowest SS= 63mV/dec;Gu,2012

2. Boukortt, N., B. Hadri, S. Patanè, A. Caddemi, and G. Crupi. "Electrical Characteristics of 8-nm SOI N-FinFETs." Silicon: 1–7.

3. Impact of device geometry and doping concentration variation on electrical characteristics of 22nm FinFET;Sivasankaran,2013

4. Significance of variation in various parameters on electrical characteristics of FinFET devices;Rai,2014

5. Electrical characteristics of trigate FinFET;Hossain;Global J. Res. Eng.,2011

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