A hetero-dielectric stack gate SOI-TFET with back gate and its application as a digital inverter-Reference-Cited by-同舟云学术

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A hetero-dielectric stack gate SOI-TFET with back gate and its application as a digital inverter

Published:2016-04 Issue: Volume:92 Page:37-51
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Mitra Suman Kr.,Goswami Rupam,Bhowmick Brinda

Funder

Microelectronics Computational Laboratory

Department of Electronics and Communication Engineering

National Institute of Technology Silchar

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference28 articles.

1. Modeling the subthreshold swing in MOSFET's;Vandamme;IEEE Electron Device Lett.,1997

2. Scaling the vertical tunnel FET with tunnel bandgap modulation and gate workfunction engineering;Bhuwalka;IEEE Trans. Electron Devices,2005

3. Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon assisted tunneling;Koswatta;Nano Lett.,2007

4. Subband spectroscopy by surface channel tunneling;Quinn;Surf. Sci.,1978

5. A Vertical MOS-gated Esaki tunneling transistor in silicon;Hansch;Thin Solid Films,2000

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