The material properties of novel boron doped InZnO thin films by solution process and its application in thin film transistors with enhanced thermal stability-Reference-Cited by-同舟云学术

The material properties of novel boron doped InZnO thin films by solution process and its application in thin film transistors with enhanced thermal stability

Published:2018-10 Issue: Volume:122 Page:377-386
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Zhong De-Yao,Li Jun,Zhou You-Hang,Huang Chuan-Xin,Zhang Jian-Hua,Li Xi-Feng,Huang Jian,Jiang Xue-Yin,Zhang Zhi-Lin

Funder

Natural Science Foundation of China

Shanghai Science and Technology Commission

National Science Foundation for Distinguished Young Scholars of China

National Key Research and Development Program of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference52 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Influences of Nitrogen Doping on the Electrical Characteristics of Indium-Zinc-Oxide Thin Film Transistors

3. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

4. Conductivity in transparent oxide semiconductors

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