Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer-Reference-Cited by-同舟云学术

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Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer

Published:2017-10 Issue: Volume:110 Page:324-329
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Li Fangzheng,Wang Lianshan,Zhao Guijuan,Meng Yulin,Li Huijie,Yang Shaoyan,Wang Zhanguo

Funder

High Technology R&D Program of China

Guangdong Provincial Sicientific and Technologic Planning Program

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference28 articles.

1. High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures;Nakamura;Jpn. J. Appl. Physics.pt Lett.,2014

2. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN;Nishida;Appl. Phys. Lett.,2001

3. Continuous wave milliwatt power AlGaN light emitting diodes at 280 nm;Sun;Jpn. J. Appl. Phys.,2004

4. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes;Hirayama;J. Appl. Phys.,2005

5. White-light emission from a single-emitting-component Ca Gd(PO ) :Eu ,Mn phosphor with tunable luminescent properties for near-UV light-emitting diodes;Guo;J. Mater. Chem.,2010

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1. Enhancing GaN/AlGaN MQW Micro LED Optical and Electrical Performance with a Non-uniform LQB;Transactions on Electrical and Electronic Materials;2023-08-10

2. Alleviated built-in electric field in the active region of AlGaN deep-ultraviolet light-emitting diodes with locally embedded p-i-n junctions;Applied Optics;2022-08-11

3. Improved Ultraviolet-B Light-Emitting Diodes with Graded All Quaternary Layers in the Active Region;ECS Journal of Solid State Science and Technology;2022-07-01

4. Remarkable efficiency improvement in AlGaN-based ultraviolet light-emitting diodes using graded last quantum barrier;Optik;2021-12

5. Leakage of holes induced by Si doping in the AlGaN first barrier layer in GaN/AlGaN multiple-quantum-well ultraviolet light-emitting diodes;Journal of Luminescence;2021-03

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