Author:
Kim Tae Hyo,Lee Hee Chul,Woo Doo Hyung
Funder
Core Technology R&D program
Catholic University of Korea
Subject
Instrumentation,Nuclear and High Energy Physics
Reference15 articles.
1. Transient ionizing radiation effects in devices and circuits;Alexander;IEEE Trans. Nucl. Sci.,2003
2. Band-to-band tunneling (BBT) induced leakage current enhancement in irradiated fully depleted SOI devices;Adell;IEEE Trans. Nucl. Sci.,2007
3. Response of a 0.25 μm thin-film silicon-on-sapphire CMOS technology to total ionizing dose;King;J. Instrum.,2010
4. G.L. Hash, et al. Radiation characterization of a Monolithic nuclear event detector, in: Workshop Record 1992 IEEE Radiation Effects Data Workshop, New Orleans, LA, USA, 1992, pp. 82–86.
5. A verified proton induced latch-up in space;Adams;IEEE Trans. Nucl. Sci.,1992