P-MOSFET latch-based monolithic signal-processing circuit for nuclear event detector

Author:

Kim Tae Hyo,Lee Hee Chul,Woo Doo Hyung

Funder

Core Technology R&D program

Catholic University of Korea

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Transient ionizing radiation effects in devices and circuits;Alexander;IEEE Trans. Nucl. Sci.,2003

2. Band-to-band tunneling (BBT) induced leakage current enhancement in irradiated fully depleted SOI devices;Adell;IEEE Trans. Nucl. Sci.,2007

3. Response of a 0.25 μm thin-film silicon-on-sapphire CMOS technology to total ionizing dose;King;J. Instrum.,2010

4. G.L. Hash, et al. Radiation characterization of a Monolithic nuclear event detector, in: Workshop Record 1992 IEEE Radiation Effects Data Workshop, New Orleans, LA, USA, 1992, pp. 82–86.

5. A verified proton induced latch-up in space;Adams;IEEE Trans. Nucl. Sci.,1992

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