Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors-Reference-Cited by-同舟云学术

Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

Published:2006-09 Issue:1 Volume:565 Page:212-220
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Swartz M.,Chiochia V.,Allkofer Y.,Bortoletto D.,Cremaldi L.,Cucciarelli S.,Dorokhov A.,Hörmann C.,Kim D.,Konecki M.,Kotlinski D.,Prokofiev K.,Regenfus C.,Rohe T.,Sanders D.A.,Son S.,Speer T.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. CMS: The Tracker Project, Technical Design Report, CERN/LHCC 98-6. CERN, Switzerland.

2. Simulation of heavily irradiated silicon pixel sensors and comparison with test beam measurements

3. A. Dorokhov, et al., Nucl. Instr. and Meth. A, e-print: arXiv:physics/0412036, in press.

4. V. Chiochia, et al., Nucl. Instr. and Meth. A, e-print: arXiv:physics/0506228, to be published.

5. Tests of silicon sensors for the CMS pixel detector

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