Distribution of Te inclusions in a CdZnTe wafer and their effects on the electrical properties of fabricated devices
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference9 articles.
1. Cadmium zinc telluride and its use as a nuclear radiation detector material
2. Non-stoichiometry related defects at the melt growth of semiconductor compound crystals – a review
3. Advances in the crystal growth and device fabrication technology of CdZnTe room temperature radiation detectors
4. Zum Mechanismus des lichtelektrischen Prim�rstromes in isolierenden Kristallen
5. Material properties of large-volume cadmium zinc telluride crystals and their relationship to nuclear detector performance
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1. Interface stability problem towards the end of THM growth of cadmium zinc telluride crystals;Journal of Crystal Growth;2022-04
2. Impact of selenium addition to the cadmium-zinc-telluride matrix for producing high energy resolution X-and gamma-ray detectors;Scientific Reports;2021-05-14
3. Investigation about elliptical region observed on CdZnTe wafers after etching treatment;Journal of Crystal Growth;2019-08
4. Investigation on Cd1-xMnxTe grown by traveling heater method with redissolution process and Te inclusions on carrier transport uniformity of detector;Journal of Crystal Growth;2019-02
5. Distribution of Te Inclusions in CdMnTe Crystal Grown by Traveling Heater Method;Journal of Electronic Materials;2018-02-05
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