Breakdown performance of guard ring designs for pixel detectors in 150 nm CMOS technology-Reference-Cited by-同舟云学术

Breakdown performance of guard ring designs for pixel detectors in 150 nm CMOS technology

Published:2024-06 Issue: Volume:1063 Page:169287
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Zhang Sinuo^ORCID,Caicedo Ivan^ORCID,Hemperek Tomasz^ORCID,Hirono Toko^ORCID,Dingfelder Jochen^ORCID

Funder

Horizon 2020

BMBF Bonn

Publisher

Elsevier BV

Reference38 articles.

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4. Study of breakdown effects in silicon multi-guard structures;Bacchetta,1997

5. Pixel Detectors: From Fundamentals to Applications;Rossi,2006

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