Charge collection and capacitance–voltage analysis in irradiated n-type magnetic Czochralski silicon detectors-Reference-Cited by-同舟云学术

Charge collection and capacitance–voltage analysis in irradiated n-type magnetic Czochralski silicon detectors

Published:2007-12 Issue:1 Volume:583 Page:189-194
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Petterson M.K.,Sadrozinski H.F.-W.,Betancourt C.,Bruzzi M.,Scaringella M.,Tosi C.,Macchiolo A.,Manna N.,Creanza D.,Boscardin M.,Piemonte C.,Zorzi N.,Borrello L.,Messineo A.,Dalla Betta G.F.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon

2. Radiation damage in silicon detectors for high-energy physics experiments

3. Temperature effects on radiation damage to silicon detectors

4. Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon

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