Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade-Reference-Cited by-同舟云学术

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Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

Published:2016-09 Issue: Volume:831 Page:133-136
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Calderini G.,Bagolini A.,Beccherle R.,Bomben M.,Boscardin M.,Bosisio L.,Chauveau J.,Giacomini G.,La Rosa A.,Marchiori G.,Zorzi N.

Funder

Autonomous Province of Trento, Project MEMS2

French CNRS/IN2P3

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. 3D — A proposed new architecture for solid-state radiation detectors

2. Simulations of planar pixel sensors for the ATLAS high luminosity upgrade

3. Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (TN), Italy, 〈http://www.fbk.eu〉.

4. Development of edgeless n-on-p planar pixel sensors for future ATLAS upgrades

5. Thin n-in-p pixel sensors and the SLID-ICV vertical integration technology for the ATLAS upgrade at the HL-LHC;Macchiolo;Nucl. Instrum. Methods,2013

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