Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes-Reference-Cited by-同舟云学术

Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes

Published:2005-10 Issue:1-2 Volume:552 Page:138-145
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Sciortino S.,Hartjes F.,Lagomarsino S.,Nava F.,Brianzi M.,Cindro V.,Lanzieri C.,Moll M.,Vanni P.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

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2. F.H. Ruddy, A.R. Dulloo, J.G. Seidel, M.K. Das, S.-H. Ryu, A.K. Agarwal, Nuclear Science Symposium, Medical Imaging Conference, Symposium on Nuclear Power Systems and the 14th International Workshop on Room Temperature Semiconductor X- and Gamma- Ray Detectors, Rome, Italy, October 16–22, 2004.

3. Advanced materials in radiation dosimetry

4. Study of silicon carbide for X-ray detection and spectroscopy

5. Wide-bandgap semiconductor ultraviolet photodetectors

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