Temperature characterization of deep and shallow defect centers of low noise silicon JFETs
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference60 articles.
1. The General Theory of Bolometer Performance
2. High Energy Resolution Bolometers for Nuclear Physics and X-Ray Spectroscopy
3. Fabrication and low-temperature characterization of Si-implanted thermistors
4. Neutron-induced noise in junction field-effect transistors
5. Noise degradation induced by /spl gamma/-rays on P- and N-channel junction field-effect transistors
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