AlGaAs diodes for X-ray spectroscopy
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. Non-Γ Deep Levels and the Conduction Band Structure of Ga1−xAlxAs Alloys
2. Avalanche multiplication characteristics of Al/sub 0.8/Ga/sub 0.2/As diodes
3. Recent progress of avalanche photodiodes in high-resolution X-rays and -rays detection
4. Wafer Technology Ltd., 34 Maryland Road, Tongwell, Milton Keynes, Bucks MK15 8HJ, UK.
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Characterization of GaSb photodiode for gamma-ray detection;Applied Physics Express;2016-06-30
2. Linear- and Geiger-Mode Characteristics of Al0.8Ga0.2As Avalanche Photodiodes;IEEE Photonics Technology Letters;2014-12-15
3. Energy response of AlGaAs soft X-ray photon counting detectors;Journal of Instrumentation;2014-05-19
4. First spectroscopic X-ray and beta results from a 400 μm diameter Al0.8Ga0.2As photodiode;Journal of Instrumentation;2013-10-14
5. A multi-energy (2–60 keV) calibration of 200 μ m and 400 μm diameter spectroscopic GaAs X-ray photodiodes;Journal of Instrumentation;2013-09-23
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