Characterization of carrier recombination and trapping processes in proton irradiated silicon by microwave absorption transients
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors
2. (RD48 Coll.);Lindstroem;Nucl. Instr. and Meth. A,2001
3. Quantitative Evaluation of Precipitated Oxygen in Silicon by Infrared Spectroscopy: Still an Open Problem
4. Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon
5. The effect of charge collection recovery in silicon p–n junction detectors irradiated by different particles
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1. Microwave photoconductance decay measurements of n- and p-type silicon irradiated with neutrons and protons;Radiation Physics and Chemistry;2021-08
2. Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices;ECS Journal of Solid State Science and Technology;2016
3. Anneal dependent variations of recombination and generation lifetime in neutron irradiated MCZ Si;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2010-01
4. Dose dependent variations of carrier recombination in silicon irradiated by high energy electrons;Lithuanian Journal of Physics;2007
5. Modeling analysis of radiation induced conductivity in electrical insulator;Acta Physica Sinica;2007
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