Influence of radiation energy on the response of a bipolar power transistor tested as dosimeter in radiation processing

Author:

Fuochi P.G.,Corda U.,Gombia E.,Lavalle M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. Irradiation of power semiconductor devices by high energy electrons: The Italian experience

2. P.G. Fuochi, M. Lavalle, E. Gombia, R. Mosca, A. Kovács, A. Vitanza, A. Patti, IAEA-TECDOC-1070, March 1999, p. 95.

3. In-plant calibration and use of power transistors for process control of gamma and electron beam facilities

4. P.G. Fuochi, M. Lavalle, E. Gombia, R. Mosca, A V. Kovács, P. Hargittai, A. Vitanza, A. Patti, IAEA-TECDOC-1201, March 2001, p. 113.

5. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Dosimetry Methods;Handbook of Nuclear Chemistry;2011

2. Characterization of a power bipolar transistor as high-dose dosimeter for 1.9–2.2MeV electron beams;Radiation Physics and Chemistry;2010-04

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