Bound-to-bound and bound-to-free yellow emission of ion-implanted zinc telluride-Reference-Cited by-同舟云学术

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Bound-to-bound and bound-to-free yellow emission of ion-implanted zinc telluride

Published:1981-01 Issue:2 Volume:22 Page:171-183
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Bryant F.J.,Verity D.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference22 articles.

1. Self-Compensation-Limited Conductivity in Binary Semiconductors. II.n-ZnTe

2. Luminescence Associated with Shallow Acceptor Centers in ZnTe

3. Influence of lattice defects and some impurities on the luminescence of znte between 5160 Å and 7400 Å

4. Electrical Transport and Photoelectronic Properties of ZnTe:Al Crystals

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical characterization of bulk Zn1−xBexTe crystals;Journal of Physics: Condensed Matter;2008-05-22

2. Investigations on implantation doping of wide-bandgap II-VI compounds using radioactive dopants;Journal of Physics D: Applied Physics;1999-01-01

3. Structural and electrical investigation of implantation damage annealing in CdTe;Semiconductor Science and Technology;1996-06-01

4. Photoluminescence of ZnTe homoepitaxial layers grown by metalorganic vapor‐phase epitaxy at low pressure;Journal of Applied Physics;1989-10-15

5. Nature of luminescence transition in low-resistivity n-type ZnS single crystals;Journal of Materials Science;1988-07

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