The effect of variation of the WF6 flow rate on the contact resistance in the DCS-based WSix deposition
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Integrated tungsten polycide;Adachi;Thin Solid Films,1998
2. Direct evidence of gate oxide thickness increase in tungsten polycide processes;Hsu;IEEE Electron Devices Lett,1991
3. The effect of fluorine in silicon dioxide gate dielectrics;Saraswat;IEEE Trans Electron Devices,1989
4. Effect of fluorine in chemical-vapor-deposited tungsten silicide film on electrical breakdown of SiO2 film;Shioya;J Appl Phys,1987
5. Tungsten silicide for the alternate gate metal in metal-oxide-semiconductor devices;Roh;J Vac Sci Technol,2001
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