Novel In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors on GaAs substrate with InxGa1−xP graded buffer layers
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
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4. Strain relaxation of compositionally graded InxGa1–xAs buffer layers for modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructures;Chang;Appl Phys Lett,1992
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