Interaction mechanism of Ge, Ti, and N in diamond prepared by high pressure and high temperature conditions-Reference-Cited by-同舟云学术

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Interaction mechanism of Ge, Ti, and N in diamond prepared by high pressure and high temperature conditions

Published:2023-01 Issue: Volume:110 Page:106052
ISSN:0263-4368
Container-title:International Journal of Refractory Metals and Hard Materials
language:en
Short-container-title:International Journal of Refractory Metals and Hard Materials

Author:

Mu Yuhu,Chen Liangchao,Song Yuanwen,Shen Weixia,Zhang Zhuangfei,Zhang Yuewen,Wang Qianqian,Wan Biao,Li Yadong,Fang Chao,Jia Xiaopeng

Publisher

Elsevier BV

Subject

General Medicine

Reference41 articles.

1. Bright luminescence of diamonds with Ge-V centers;Boldyrev;J. Lumin.,2018

2. Si doping effects on the growth of large single-crystal diamond in a Ni-based metal catalyst system under high pressure and high temperature;Fang;Cryst. Growth Des.,2019

3. Diamond/carbon nanotube composites: Raman, FTIR and XPS spectroscopic studies;Varga;Carbon.,2017

4. Synergistic influences of titanium, boron and oxygen on large-size single-crystal diamond growth at high pressure and high temperature;Zhou;Chin. Phys. B.,2022

5. Effect of Ni2O3 on diamond crystal growth in an Fe-Ni-C system under high temperature and high pressure;Mu;Cryst. Eng. Comm.,2021

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Fe6N2 on diamond growth under high pressure and high temperature conditions;Diamond and Related Materials;2024-02

2. High-Pressure Synthesis and Characterization of Cr-Doped Large Single-Crystal Diamonds;Crystal Growth & Design;2024-01-31

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