Semiconductor laser using multimode interference principle-Reference-Cited by-同舟云学术

Semiconductor laser using multimode interference principle

Published:2018-01 Issue: Volume:98 Page:75-78
ISSN:0030-3992
Container-title:Optics & Laser Technology
language:en
Short-container-title:Optics & Laser Technology

Author:

Gong Zisu,Yin Rui,Ji Wei,Wu Chonghao

Funder

National Natural Science Foundation

Shandong Science and Technology Development Project

Fundamental Research Funds of Shandong University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Kiichi Hamamoto et al., Single-transverse-mode active-MMI 1.5μm-InGaAsP buried-hetero laser diode, in: Postdeadline Papers of European Conf. Integrated Optics (ECIO’97, Stockholm, Sweeden), PD5. 1997.

2. Single transverse mode active multimode interferometer InGaAsP/InP laser diode;Hamamoto;Electron. Lett.,1998

3. Active multimode interferometer laser diode demonstrated via 1.48μm high power application;Hamamoto;Electron. Lett.,2000

4. Single-transverse-mode active multi-mode- interferometer 1.45 μm high power laser diode;Hamamoto;Appl. Phys. B,2001

5. Over 1 W output power with low driving voltage 14xx-nm pump laser diodes using active multimode-interferometer;Ohya;Electron. Lett.,2004

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