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Monolithic integration of a InP AWG and InGaAs photodiodes on InP platform

  • Published:2017-05 Issue: Volume:90 Page:122-127
  • ISSN:0030-3992
  • Container-title:Optics & Laser Technology
  • language:en
  • Short-container-title:Optics & Laser Technology

Author:

Lv Qianqian,han Qin,Pan Pan,Ye Han,Yin Dongdong,Yang Xiaohong

Funder

National High Technology Research and Development Program of China

National Natural Foundation of China

National Basic Research Program of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The dazzling/damage mechanism of InGaAs detectors by near-infrared continuous laser;Results in Physics;2024-06

2. Broadband Achromatic Metalenses With High Focusing Efficiency Based on Inverse Design;IEEE Photonics Technology Letters;2023-12-01

3. A Broadband Metalens Exhibiting Superior Focusing Efficiency and Polarization Insensitivity;2023 Asia Communications and Photonics Conference/2023 International Photonics and Optoelectronics Meetings (ACP/POEM);2023-11-04

4. SOI-based 12 × 12 arrayed waveguide grating for fiber Bragg grating interrogation system;Measurement Science and Technology;2023-08-02

5. Broadband Polarization-Insensitive Metalenses with High Focusing Efficiency Based on Inverse Design;2023 21st International Conference on Optical Communications and Networks (ICOCN);2023-07-31
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