Influence of electrode parameters on the performance of optically controlled MESFETs
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Optical control of GaAs MESFET's;DeSalles;IEEE Trans Microwave Theory Tech,1983
2. Optical effects on the static and dynamic characteristics of a GaAs MESFET;Gautier;IEEE Trans Microwave Theory Tech,1985
3. Analysis of optically controlled microwave/millimeter-wave devic structures;Simons;IEEE Trans Microwave Theory Tech,1986
4. Analytical model for optically generated currents in GaAs MESFETs;Madjar;IEEE Trans Microwave Theory Tech,1992
5. GaAs OPFET characteristics considering the effect of gate depletion with modulation due to incident radiation;Pal;IEEE Trans Electron Devices,1992
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1. Influence of surface recombination and the life time of minority carriers on the characteristics of MESFET (OPFET) GaN;Optik;2021-05
2. Diamond device architectures for UV laser monitoring;Laser Physics;2016-06-30
3. Polycrystalline diamond UV-triggered MESFET receivers;Nanotechnology;2012-01-20
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