Study of femtosecond laser induced periodic structure on amorphous silicon films and crystallization characteristics-Reference-Cited by-同舟云学术

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Study of femtosecond laser induced periodic structure on amorphous silicon films and crystallization characteristics

Published:2025-02 Issue: Volume:181 Page:111764
ISSN:0030-3992
Container-title:Optics & Laser Technology
language:en
Short-container-title:Optics & Laser Technology

Author:

Shi Wei,Qi Dongfeng,Wang Wenke,Li Zhanzhu,Zhang Jianguo,Zheng Hongyu^ORCID,Yang Bing,Sun Tengfei^ORCID,Wei Juan,Chen Songyan

Funder

National Key Research and Development Program of China

Taishan Scholar Project of Shandong Province

Shandong Province Natural Science Foundation

Publisher

Elsevier BV

Reference59 articles.

1. Sequential lateral crystallization of amorphous silicon on glass by blue laser annealing for high mobility thin-film transistors;Jung;Thin Solid Films,2019

2. Characterization and simulation analysis of laser-induced crystallization of amorphous silicon thin films;Huang;Mater. Sci. Semicond. Process.,2013

3. Polycrystalline silicon thin-film transistors: a continuous evolving technology;Fortunato;Thin Solid Films,1997

4. Hot wire chemical vapor deposition of Si containing materials for solar cells;Mahan;Sol. Energy Mater. Sol. Cells,2003

5. Polycrystalline silicon thin film transistors;Brotherton;Semicond. Sci. Technol.,1999

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