Velocity saturation in short channel field effect transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference8 articles.
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Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Monte Carlo study of electron transport in silicon inversion layers;Physical Review B;1993-07-15
2. Performance limits of deep submicron N- and P-channel MOS transistors;Microelectronics Journal;1991-02
3. Analytical device model for submicrometer MOSFET's;IEEE Transactions on Electron Devices;1991
4. Carrier Transport in Bulk Silicon and in Weak Silicon Inversion Layers;Advances in Electronics and Electron Physics;1990
5. High-field drift velocity of electrons in silicon inversion layers;Solid-State Electronics;1988-01
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